Europhysics Letters (EPL) · 1988 · 122 citations · 15 references
EngineeringPhysicsCondensed Matter PhysicsSemiconductor MaterialsThin FilmsQuantum WellsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesTwo-dimensional SemiconductorsCarrier Transport In Quantum WellsElectron DensityInterface Roughness ScatteringQuantum Well StructuresRoughness ParametersScatteringTwo-dimensional Electron GasesTwo-dimensional Semiconductor Interfaces
The mobility of the two-dimensional electron gas in thin GaAs multiple quantum well structures is studied. At low temperatures a strong decrease is found for well widths between 60 Å and 40 Å. This can be explained by interface roughness scattering. The measured electron density dependence of the mobility is used to determine the roughness parameters Λ ≈ 65 Å an Δ' ≈ 2.4 Å. The importance of the penetration of the electron wave function into the barrier is discussed.
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Electronic properties of two-dimensional systems
Tsuneya Ando, A. B. Fowler, Frank Stern · Reviews of Modern Physics · 1982 · 7.4K citations
Natural Sciences, Chemistry, Physics +16
Interface roughness scattering in GaAs/AlAs quantum wells
H. Sakaki, Takeshi Noda, Kazuhiko Hirakawa et al. · Applied Physics Letters · 1987 · 680 citations
Two-dimensional electron gas at a semiconductor-semiconductor interface
H. L. Störmer, R. Dingle, A. C. Gossard et al. · Solid State Communications · 1979 · 448 citations