Spin-coated zinc oxide transparent transistors

B. Norris, Jeremy T. Anderson, John F. Wager, Douglas A. Keszler

Journal of Physics D Applied Physics · 2003 · 269 citations · 15 references

Concepts

Abstract

A ZnO transparent thin-film transistor (TTFT) with a channel layer formed via spin-coating deposition is demonstrated. The TTFT is highly transparent and exhibits n-channel, enhancement-mode behaviour with a channel mobility as large as 0.20 cm2 V−1 s−1 and a drain current on-to-off ratio of nearly 107.

References

15