Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 18 citations · 0 references
EngineeringMaterials EngineeringMaterials SciencePhotonicsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesOptical Properties Of SemiconductorsQuantum DotsSemiconductor Device MaterialsSemiconductor NanomaterialsSemiconductor PhysicsAtomic Force Microscopy AnalysisLow-temperature GrowthMolecular Beam EpitaxyPhotoluminescencePhotoluminescence SpectroscopyQuantum Dot MaterialsSemiconductor Quantum DotsTemperature-dependent Growth
Abstract We have grown InAs and InP quantum dots (QDs) on GaP substrate by Molecular Beam Epitaxy (MBE) and analysed them by Atomic Force Microscopy (AFM) and photoluminescence (PL). AFM images confirm the formation of InAs and InP QDs. Largest InAs QDs density is obtained at a growth temperature of 450 °C and under an AsH 3 flux of 0.3SCCM. The evolution of QDs shape and absence of photoluminescence indicate a likely plastic relaxation of the strain between InAs and GaP. Concerning InP/GaP QDs, their lateral size, height and density indicate good quality QDs. Photoluminescence signal has been detected for capped InP/GaP QDs until 180 K. The unchanged peak position with respect to InP coverage is attributed to the nearly constant height of the QDs. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)