Calculation of the pseudobinary alloy semiconductor phase diagrams

Abstract

To calculate the pseudobinary alloy semiconductor phase diagrams the quasiregular solution theory is used. The interaction parameter in the solid (Ω) is determined on the base of an analysis of the X-ray diffuse scattering and the composition dependence of the elastic constants. The values of liquid interaction parameter in the pseudobinary solutions GaP–InP, GaAs–InAs, GaAs-AlAs, GaAs–GaP, and GaAs–GaSb are determined by coincidence between calculated curves and experimental points on the liquidus or solidus lines. The Ω values are also used for the calculation of the insolubility curves in the solid phase.