Applied Physics Letters · 1995 · 10 citations · 0 references
Ultrashallow junctions (∼60 nm) are obtained using low energy BF2 (5 keV) implants in crystalline Si. The variation of junction depth as a function of the dose rate is studied for doses of 1×1014 and 1×1015 cm−2. Boron diffusion is retarded in the tail region for the higher dose rates and consequently the junction depth decreases as compared to the lower dose rates. The residual defect density after a 950 °C, 10 s anneal for a dose of 1×1015 cm−2 is reduced for the higher dose rate as compared to the lower dose rate.