Evidence of the origin of infrared scattering in GaAs with high-resolution infrared tomography

Abstract

Transmission electron microscopy and A-B etching are the usual methods to observe microprecipitates in GaAs substrates. More recently, tomography has been used to characterize GaAs wafers and infrared light scattering was assumed to be caused by microprecipitates. Work on high-resolution tomography which confirms this assumption is presented in this paper.