Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots

Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs

Glenn S. Solomon, J. A. Trezza, A. F. Marshall et al. · Physical Review Letters · 1996 · 700 citations

Materials Science, Ii-vi Semiconductor, Island Size +11

Intermixing and shape changes during the formation of InAs self-assembled quantum dots

J. M. Garcı́a, G. Medeiros‐Ribeiro, K. Schmidt et al. · Applied Physics Letters · 1997 · 586 citations · Full text

Engineering, Colloidal Nanocrystals, Semiconductor Nanostructures +19

Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations

Craig Pryor · Physical review. B, Condensed matter · 1998 · 472 citations · Full text

Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying

P. B. Joyce, T. J. Krzyzewski, Gavin R. Bell et al. · Physical review. B, Condensed matter · 1998 · 296 citations

Materials Science, Semiconductors, Wetting Layer +13

Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy

P. B. Joyce, T. J. Krzyzewski, G. R. Bell et al. · Physical review. B, Condensed matter · 2000 · 211 citations

Optical Materials, Engineering, Semiconductor Nanostructures +16