High-temperature heavy-hole and light-hole excitons and well-width dependence of excitons in InGaAs/InAIAs multiple-quantum-well structures

Abstract

Well-resolved heavy-hole and light-hole exciton resonances in the absorption spectrum were observed at temperatures as high as 460 K in InGaAs/InAlAs multiple-quantum-well structures grown by molecular-beam epitaxy for the first time. Well-width dependences of the absorption spectrum and photoluminescence spectrum were also studied. The observed well-width dependences can be explained by monolayer fluctuation and alloy disorder.