1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

Diode Lasers and Photonic Integrated Circuits

L.A. Coldren · Optical Engineering · 1997 · 1.7K citations

Engineering, Electrical Engineering, Optics +16

The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers

A.F. Phillips, Stephen J. Sweeney, A.R. Adams et al. · IEEE Journal of Selected Topics in Quantum Electronics · 1999 · 182 citations

Engineering, Electrical Engineering, Physics +17

Low-threshold index-guided 1.5 μm long-wavelength vertical-cavity surface-emitting laser with high efficiency

M. Ortsiefer, R. Shau, G. Böhm et al. · Applied Physics Letters · 2000 · 109 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers

Nelson Tansu, L. J. Mawst · IEEE Photonics Technology Letters · 2002 · 61 citations · Full text

Engineering, Materials Engineering, Materials Science +17

88 °C, continuous-wave operation of apertured, intracavity contacted, 1.55 μm vertical-cavity surface-emitting lasers

Shigeru Nakagawa, E. Hall, Guilhem Almuneau et al. · Applied Physics Letters · 2001 · 49 citations

Engineering, Electrical Engineering, Materials Science +17