physica status solidi (RRL) - Rapid Research Letters · 2008 · 94 citations · 10 references
EngineeringElectrical EngineeringElectronic MaterialsOptoelectronicsSemiconductor DevicesOptical ImagingSilicon MaterialsSilicon PhotonicsCarrier Lifetime MeasurementCharge Carrier DensityConditions Of MeasurementPhotoluminescencePhotoluminescence SpectroscopySilicon CharacterizationSilicon Wafers
Abstract We use photoluminescence (PL) measurements by a silicon charge‐coupled device camera to generate high‐resolution lifetime images of multicrystalline silicon wafers. Absolute values of the excess carrier density are determined by calibrating the PL image by means of contactless photoconductance measurements. The photoconductance setup is integrated in the camera‐based PL setup and therefore identical measurement conditions are realised. We demonstrate the validity of this method by comparison with microwave‐detected photoconductance decay measurements. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Photoluminescence imaging of silicon wafers
Thorsten Trupke, R.A. Bardos, Martin C. Schubert et al. · Applied Physics Letters · 2006 · 662 citations