Concepedia

Passive Q switching of Nd:YAG lasers by use of bulk semiconductors

Y. Tsou, E. Garmire, Wanshi Chen, M. Birnbaum, Rachna Asthana

Optics Letters · 1993 · 33 citations · 3 references

Concepts

Bulk Ingaasp FilmPhotonicsSingle Q-switched PulseOptical PumpingEngineeringPhysicsSemiconductor LasersOptical PropertiesPassive Q SwitchingBulk SemiconductorsApplied PhysicsLaser ApplicationsOptical SwitchingOptical CeramicOptoelectronicsHigh-power LasersOptical AmplifierYag Lasers

Abstract

We report passive Q switching of Nd:YAG lasers with the use of a bulk InGaAsP film, grown on an InP substrate by liquid-phase epitaxy, as an intracavity saturable absorber. The single Q-switched pulse had a maximum energy of 1.65 mJ with a 20-ns duration. The simple technology is easily extendible to any infrared solid-state laser.

References

3

Room temperature excitonic nonlinear absorption and refraction in GaAs/AlGaAs multiple quantum well structures

D. S. Chemla, David A. B. Miller, P. W. Smith et al. · IEEE Journal of Quantum Electronics · 1984 · 755 citations

Photonics, Gaas/algaas Multiple Quantum, Engineering +13

Passive mode locking and Q switching of an erbium 3 μm laser using thin InAs epilayers grown by molecular beam epitaxy

K. L. Vodopyanov, A. Lukashev, Christopher Phillips et al. · Applied Physics Letters · 1991 · 33 citations

Optical Materials, Engineering, Laser Science +17

Pulsed YAG:Nd3+laser with a passiveQswitch in the form of an LiF crystal containing $F^-_2$ centers

Tasoltan T. Basiev, I Ya Itskhoki, B G Lysoĭ et al. · Soviet Journal of Quantum Electronics · 1983 · 10 citations

Lif Crystal, Engineering, Laser Science +16