Batteryless Transceiver Prototype for Medical Implant in 0.18-$\mu$m CMOS Technology

Abstract

A medical implant communication service/industrial-scientific-medical band batteryless transceiver prototype for medical implants is proposed and implemented using 0.18-μm CMOS technology. An RF-dc converter is used to accomplish the batteryless function of the transceiver, where the RF powering source is also the reference signal source for the frequency synthesizer. MOS-bipolar devices are employed in receiver analog band circuits as pseudo-resistors. Dissipating 2.19 mW in the receive mode, the transceiver achieves a sensitivity from -68 to -73 dBm for a BER <; 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> , at a data rate of 20 kb/s. An injection-locked technique is used to reduce the carrier phase noise. Dissipating 3.32 mW in the transmitter mode, the transceiver delivers an output power of -20.9--17 dBm over the band of interest and the carrier presents an in-band phase noise of -108.0--114.3 dBc/Hz at an offset frequency of 300 kHz.