2013 · 61 citations · 10 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIii-v SemiconductorsMicrowave AmplifiersMicrowave Semiconductor DevicesPower AmplifiersWide Band Gap SemiconductorsDie DesignGallium NitrideGallium Nitride Power AmplifiersGallium Nitride Power DevicesGan-based High-frequency DevicesHigh-efficiency Power AmplifiersPower Amplifier DesignPower Output
The design and performance of two high efficiency Ka-band power amplifier MMICs utilizing a 0.15μm GaN HEMT process technology is presented. Measured in-fixture continuous wave (CW) results for the 3-stage balanced amplifier demonstrates up to 11W of output power and 30% power added efficiency (PAE) at 30GHz. The 3-stage single-ended design produced over 6W of output power and up to 34% PAE. The die size for the balanced and single-ended MMICs are 3.24×3.60mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 1.74×3.24mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> respectively.
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GaN MMIC technology for microwave and millimeter-wave applications
M. Micovic, A. Kurdoghlian, H. P. Moyer et al. · 2005 · 73 citations
2 and 4 watt Ka-band GaAs PHEMT power amplifier MMICs
F.Y. Colomb, A. Platzker · 2003 · 36 citations