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Resonant photoelectron spectroscopy on NiO
47
Citations
14
References
1996
Year
Charge ExcitationsEngineeringLocalized Excited StateExcitation Energy TransferElectronic Excited StateElectronic StructureSemiconductorsAbsorption ThresholdsElectron SpectroscopyQuantum MaterialsPhysicsStrong ResonancesOxide ElectronicsAtomic PhysicsPhotoelectric MeasurementQuantum ChemistryExcited State PropertyResonant Photoelectron SpectroscopySpectroscopyNatural SciencesApplied PhysicsCondensed Matter PhysicsNio Valence Band
Resonant photoelectron spectroscopy studies have been performed on the NiO valence band at photon energies corresponding to the Ni $2p$,$3p$,and O $1s$ absorption thresholds. Strong resonances are seen in the vicinity of the Ni $2p$ threshold, which confirm earlier conclusions from the weaker resonances seen at the Ni $3p$ threshold. No valence-band resonance is observed at the O $1s$ threshold. The analysis of this data confirms the picture of NiO as a strongly correlated charge-transfer insulator by identifying the highest-lying states as being of mainly $3{d}^{8}\mathit{L}$ final-state character. The existence of localized excited Ni states, as well as the delocalized nature of the O states, are confirmed. Comparisons with the configuration-interaction model and quasiparticle calculations are also made.
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