Applied Physics Letters · 1974 · 24 citations · 5 references
Natural SciencesMaterials EngineeringMaterials ScienceCrystal StructureDislocation MechanicsDislocation TheoryElectron DiffractionSemiconductor DefectsStacking FaultsDiffraction Signatures Of Stacking FaultsElectron Microscopy Of Stacking FaultsFault GrowthFrank Partial DislocationsPrecipitate EvolutionPrecipitate MorphologyPrecipitatesStacking Fault Formation
An electron microscopic diffraction study for circular stacking faults in silicon has been carried out. For the first time it has been possible to make direct correlation between the faults and subsurface precipitates, and to confirm that circular fault growth involves climb of a Frank dislocation from a precipitate site.
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