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Relaxation mechanism of ferroelectric switching in Pb(Zr,Ti)O3 thin films
131
Citations
25
References
2001
Year
Materials ScienceMagnetismSemiconductorsMultiferroicsPolarization ReversalEngineeringFerroelasticsDomain Wall DynamicsFerroelectric ApplicationPolarization Reversal ProcessApplied PhysicsQuantum MaterialsCondensed Matter PhysicsFerroelectric MaterialsDomain Wall StructureRelaxation MechanismThin Films
The polarization reversal process of tetragonal Pb(Zr,Ti)O3 thin films has been intensively studied using conventional hysteresis and rectangle pulse measurements. Decreasing the voltage level of the pulses significantly slows down the polarization switching to the range of milliseconds. The switching current response shows a Curie–von Schweidler behavior over a broad time range. The transient current and the frequency dependence of the P–V loops of these films compared to the properties of ferroelectric single crystals show some similarities but also significant differences. The theoretical models of the classical ferroelectric phase transition and especially the conditions of the pulse measurements in single crystals and thin films are discussed. It leads to the conclusion that it is not the domain wall structure and domain wall motion that determine the polarization reversal but dissipative polarization processes which can take place in both ferroelectric and nonferroelectric high-k dielectric thin films.
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