Applied Physics Letters · 2008 · 24 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLaser PhysicsQuantum DotsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsCurrent DensityCurrent Density DistributionLasersMolecular Beam EpitaxyQuantum Dot DevicesQuantum Dot LasersQuantum EfficiencySemiconductor Quantum Dots
InAs quantum dash (QDH) and quantum dot (QD) lasers grown by molecular beam epitaxy on InP substrate are studied. The laser active zones with multiple stacked layers exhibit lasing wavelength at 1.55μm. On these devices, the experimental threshold current density reaches its minimum value for a double stacked QDH/QD structure. Other basic laser properties such as gain and quantum efficiency are compared. QD lasers exhibit better threshold current densities but equivalent modal gain per layer than QDH. Finally, the analysis of the modal gain on QD lasers shows a promising potential for improvement.
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InGaAs-GaAs quantum-dot lasers
D. Bimberg, N. Kirstaedter, N. N. Ledentsov et al. · IEEE Journal of Selected Topics in Quantum Electronics · 1997 · 570 citations
Room-temperature operation of InAs quantum-dash lasers on InP [001]
Ruolin Wang, A. Stintz, P.M. Varangis et al. · IEEE Photonics Technology Letters · 2001 · 211 citations