1200μm<sup>2</sup> Physical Random-Number Generators Based on SiN MOSFET for Secure Smart-Card Application

Mari Matsumoto, Shinichi Yasuda, Ryuji Ohba, Kazutaka Ikegami, Tetsufumi Tanamoto, Shinobu Fujita

2008 · 53 citations · 5 references

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Concepts

Abstract

In this work, because of the high-amplitude random noise at high frequency from the SiN MOSFET, we need only a single amplifier and A/D converter, and the amplifier area is decreased.

References

5