Oxidation of 6 H  ‐ SiC as Function of Doping Concentration and Temperature

Abstract

We have measured the oxide growth of n‐ and p‐type epitaxial chemically vapor deposited (CVD) films and its dependence on doping concentration and temperature. We used wet oxidation in a temperature region from 1173 to 1723 K on as‐grown (0001) surfaces [Si(0001)‐face] of CVD grown epitaxial layers on substrates. All oxidations were carried out with the same parameters (6 h oxidation time, 1 atm pressure, 11.1 sccm flux, 90°C bubbler temperature). Samples with different doping concentrations were oxidized. For the n‐type samples we used nitrogen‐doped with nitrogen concentrations from . For p‐type samples we used aluminum‐doped with aluminum concentrations from . Oxide steps were produced by a photolithographic process followed by . The oxide thickness was determined mechanically by measuring the oxide step‐height. For oxidation temperatures from 1273 up to 1473 K and reaction‐controlled oxide growth we observed that the oxide thickness increases with the Fermi energy of the sample.