Analog resistive switching behavior of Al/Nb₂O₅/Al device

Abstract

Resistive switching effects in metal–insulator–metal (MIM) structures are strongly influenced by the electrode materials. In this work a platinum-free symmetric Al/Nb2O5/Al device is compared to a device with platinum bottom electrode. For the device with the platinum bottom electrode, filamentary based resistive switching with good data retention was observed up to 125 °C. For the Al/Nb2O5/Al device, an area dependent pure electronic based resistive switching was observed. Electron trapping at the bottom electrode interface is responsible for the observed analog switching behavior which makes an Al/Nb2O5/Al device suitable for neuromorphic applications.