High-quality heterojunction between <i>p</i>-type diamond single-crystal film and <i>n</i>-type cubic boron nitride bulk single crystal

Abstract

We presented the results on the fabrication and characterization of high-quality heterojunction between p-type diamond single-crystalline film and n-type cubic boron nitride (c-BN) bulk single crystal. By employing a simple surface diffusion, we prepared the n-type c-BN bulk single crystals with relatively low resistivity (1.0×10−1 Ω cm). Combining p-type diamond films grown by chemical vapor deposition with n-type c-BN, we fabricated a high-quality heterojunction bipolar p–n diode, which the turn-on voltage of the heterojunction was 0.85 V, and the current density reached to 170 A/m2 when the forward bias was applied to 3 V.