Sulfur: A donor dopant for<i>n</i>-type diamond semiconductors

Abstract

Evidence for the donor nature of sulfur in diamond was obtained by introducing hydrogen sulfide into the microwave assisted plasma chemical vapor deposition process. The sulfur was successfully doped into homoepitaxial diamond (100) films, which exhibit n-type conduction by Hall-effect measurements in the temperature range of 250--550 K. The mobility of electrons at room temperature was 597 ${\mathrm{cm}}^{2}$ ${\mathrm{V}}^{\mathrm{\ensuremath{-}}1}$ ${\mathrm{s}}^{\mathrm{\ensuremath{-}}1}$. The ionization energy of 0.38 eV was determined by measuring the carrier concentration as a function of temperature.