Clear quantum-confined luminescence from crystalline silicon/SiO2 single quantum wells

Abstract

Crystalline silicon single quantum wells (QWs) were fabricated by high-temperature thermal oxidation of ELTRAN® (Epitaxial Layer TRANsfer) silicon-on-insulator (SOI) wafers. The Si layer thicknesses enclosed by thermal SiO2 range from 0.8 to 5 nm. Luminescence energies from such QWs vary from 1.77 to 1.35 eV depending on the Si layer thickness, without evidence for interface-mediated transition seen in earlier work. The ability to detect quantum-confined luminescence seems to arise from the use of ELTRAN SOI wafers, from suppressed interface state luminescence by high-temperature oxidation and, possibly, from interface matching by crystalline silicon oxide.