Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals

Single crystal growth of Si1 − Ge by the Czochralski technique

S. N. Rossolenko, V. Alex, A. Gerhardt et al. · Journal of Crystal Growth · 1996 · 132 citations

Natural Sciences, Materials Engineering, Materials Science +16

Float zone growth and characterization of Ge1−xSix (x⩽10at%) single crystals

Thomas A. Campbell, M. Schweizer, P. Dold et al. · Journal of Crystal Growth · 2001 · 79 citations

Natural Sciences, Materials Engineering, Materials Science +14

Growth of Ge-rich Si Ge1− single crystal with uniform composition (x=0.02) on a compositionally graded crystal for use as GaAs solar cells

Kazuo Nakajima, Shigeo Kodama, Satoru Miyashita et al. · Journal of Crystal Growth · 1999 · 56 citations

Engineering, Materials Engineering, Materials Science +17

Growth of ternary InxGa1−xAs bulk crystals with a uniform composition through supply of GaAs

Kazuo Nakajima, T. Kusunoki, Chisato Takenaka · Journal of Crystal Growth · 1991 · 51 citations

Natural Sciences, Materials Engineering, Materials Science +13

A numerical investigation of the effect of thermoelectromagnetic convection (TEMC) on the Bridgman growth of Ge1−xSix

Serhat Yeşilyurt, L. Vujisic, Shariar Motakef et al. · Journal of Crystal Growth · 1999 · 49 citations

Natural Sciences, Materials Engineering, Materials Science +15