Applied Physics Letters · 1996 · 38 citations · 0 references
Natural SciencesMaterials SciencePhysicsCrystal StructureMaterials CharacterizationThin FilmsSemiconductor PhysicsThin Film Electrical PropertiesThin-film MaterialsNbn Thin FilmsNitride Thin FilmsNitrides Thin FilmsPenetration DepthPenetration Depth DependenceResistivitySemiconductor CharacterizationTemperature-dependent Resistivity
The zero temperature penetration depth λ(0) of single-crystal NbN thin films has been measured at 82 GHz using an open resonator. The NbN films used in this study have a (200) single-crystal structure and Tc and ρ20 (normal state resistivity at 20 K) are 16 K and 62 mΩ cm, respectively. λ(0) was obtained by applying a least-squares fit to the change of penetration depth using the BCS theory. We obtain λ(0)=194 nm, which shows good agreement with the calculated value from Tc,ρ20 and Δ(0).