Photoluminescence Study of CuInSe₂ Thin Films Prepared by the Selenization Technique

Abstract

CuInSe 2 thin films were prepared by the selenization technique with solid- or vapor-phase selenium, and photoluminescence measurements were carried out to identify the energy levels associated with various defect structures. The possible origins of these defect states are discussed on the basis of the reported energy level diagram of single-crystal and thin-film CuInSe 2 . It is found that the photoluminescence measurement is sensitive to native defects and formation kinetics of CuInSe 2 and useful in the optimization of the selenization process.