Indium antimonide as a fluxmeter material

Abstract

General principles in the measurement of magnetic fields by use of the Hall effect are considered, and it is shown that the efficiency of Hall generator devices is proportional to the square of the carrier mobility in the material used. Indium antimonide, a semi-conductor with a very high carrier mobility, is therefore very useful for such a purpose. The construction of fluxmeter probe units using indium antimonide is described. Sensitivity and linearity are discussed, and methods are given for temperature compensation.