Applied Physics Letters · 2014 · 208 citations · 19 references
EngineeringMaterials EngineeringMaterials ScienceEnergy MaterialsSemiconductor DevicesSemiconductor MaterialsPerovskite MaterialsPhotovoltaic DevicesPhotovoltaic MaterialsSemiconductor Device MaterialsSolar Cell MaterialsSolar CellsAbsorber MaterialsCurrentsLight-absorbing LayersModular Device ArchitectureOpen-circuit VoltageOrganic-inorganic Hybrid PerovskitesPerovskite Solar CellsTandem Solar Cells
The study reports a monolithic tandem photovoltaic device using earth‑abundant, solution‑processed absorbers and anticipates that further optimization of device elements, particularly the top contact electrode, will improve current and efficiency. The device was fabricated by monolithically integrating Cu₂ZnSn(S,Se)₄ kesterite and CH₃NH₃PbI₃ perovskite absorbers on a single substrate using solution‑processed, earth‑abundant materials without layer transfer. The tandem device achieved a record high open‑circuit voltage of 1.35 V, matching the sum of its constituent cells and surpassing all prior monolithic tandem chalcogenide devices, while illustrating the compatibility of kesterite and perovskite absorbers and pointing toward efficiencies above 20 %.
We report a monolithic tandem photovoltaic device with earth-abundant solution processed absorbers. Kesterite Cu2ZnSn(S,Se)4 and perovskite CH3NH3PbI3 solar cells were fabricated monolithically on a single substrate without layer transfer. The resulting devices exhibited a high open circuit voltage (Voc) of 1350 mV, close to the sum of single-absorber reference cells voltages and outperforms any monolithic tandem chalcogenide device (including Cu(In,Ga)Se2) reported to date. Ongoing optimization of several device elements including the severely limiting top contact electrode is expected to yield superior currents and efficiency. Importantly, our device architecture demonstrates the compatibility and synergistic potential of two of the most promising emerging photovoltaic materials and provides a path for optimization towards >20% efficiency.
19
Device Characteristics of CZTSSe Thin‐Film Solar Cells with 12.6% Efficiency
Wei Wang, Mark T. Winkler, Oki Gunawan et al. · Advanced Energy Materials · 2013 · 3.2K citations