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Low-Temperature Solution-Processed Perovskite Solar Cells with High Efficiency and Flexibility
1.4K
Citations
35
References
2014
Year
EngineeringHalide PerovskitesOptoelectronic DevicesChemistryMixed Halide PerovskitePerovskite ModulePhotovoltaicsSolar Cell StructuresMaterials ScienceElectrical EngineeringPerovskite MaterialsEnergy StorageLead-free PerovskitesElectron Transport LayerElectronic MaterialsPerovskite Solar CellHigh EfficiencyPerovskite CompoundsThin FilmsSolar CellsFunctional MaterialsSolar Cell Materials
Perovskite photovoltaics have attracted attention, but conventional TiO₂ electron‑transport layers require high‑temperature (≈450 °C) processing that limits widespread adoption. This study introduces a low‑temperature (<120 °C) processing approach to fabricate high‑efficiency perovskite solar cells on both rigid and flexible substrates. Devices were fabricated by solution‑processing a mixed‑halide perovskite (CH₃NH₃PbI₃₋ₓClₓ) with PEDOT:PSS as the hole transport layer and PCBM as the electron transport layer on a substrate/ITO/PEDOT:PSS/CH₃NH₃PbI₃₋ₓClₓ/PCBM/Al stack, all deposited below 120 °C. The resulting cells achieved 11.5 % power‑conversion efficiency on glass/ITO and 9.2 % on PET/ITO flexible substrates.
Perovskite compounds have attracted recently great attention in photovoltaic research. The devices are typically fabricated using condensed or mesoporous TiO2 as the electron transport layer and 2,2'7,7'-tetrakis-(N,N-dip-methoxyphenylamine)9,9'-spirobifluorene as the hole transport layer. However, the high-temperature processing (450 °C) requirement of the TiO2 layer could hinder the widespread adoption of the technology. In this report, we adopted a low-temperature processing technique to attain high-efficiency devices in both rigid and flexible substrates, using device structure substrate/ITO/PEDOT:PSS/CH(3)NH(3)PbI(3-x)Cl(x)/PCBM/Al, where PEDOT:PSS and PCBM are used as hole and electron transport layers, respectively. Mixed halide perovskite, CH(3)NH(3)PbI(3-x)Cl(x), was used due to its long carrier lifetime and good electrical properties. All of these layers are solution-processed under 120 °C. Based on the proposed device structure, power conversion efficiency (PCE) of 11.5% is obtained in rigid substrates (glass/ITO), and a 9.2% PCE is achieved for a polyethylene terephthalate/ITO flexible substrate.
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