MOVPE studies for a monolithically integrated DH laser/HBT laser driver

Chemical Etching Characteristics of  ( 001 ) InP

Sadao Adachi, Hitoshi Kawaguchi · Journal of The Electrochemical Society · 1981 · 151 citations · Full text

Engineering, Materials Engineering, Materials Science +14

Growth of Fe-doped semi-insulating InP by MOCVD

J. Long, V. G. Riggs, W. D. Johnston · Journal of Crystal Growth · 1984 · 104 citations

Natural Sciences, Materials Engineering, Materials Science +12

The role of impurities in III/V semiconductors grown by organometallic vapor phase epitaxy

G. B. Stringfellow · Journal of Crystal Growth · 1986 · 89 citations

Engineering, Materials Engineering, Materials Science +14

A study of p-type dopants for InP grown by adduct MOVPE

A.W. Nelson, L.D. Westbrook · Journal of Crystal Growth · 1984 · 79 citations

Engineering, Materials Engineering, Materials Science +13

Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors

Jun Shibata, Ichiro Nakao, Yoichi Sasai et al. · Applied Physics Letters · 1984 · 71 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16