Yoichi Sasai - Concepedia

Author

Yoichi Sasai

Panasonic (Japan)

Also Known As

Yoichi SASAI, Yoichi Sasai, Yoichi Sasai Yoichi Sasai

Publications

351

Citations

H-Index

Concepts

All Affiliations

Panasonic (Japan)The University of Osaka

About

Yoichi Sasai is an author at Panasonic (Japan) specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	318
2	Applied Physics	9	9	318
3	Electrical Engineering	3	3	156
4	Natural Sciences	1	1	64
5	Materials Engineering	1	1	12

Yoichi Sasai

Publications

318

Citations

H-Index

Page 1

	Year	Citations
Characteristics of periodically domain-inverted LiNbO3 and LiTaO3 waveguides for second harmonic generation Kazuhisa Yamamoto, Kiminori Mizuuchi, Kunihiko Takeshige, Journal of Applied Physics Heat TreatmentPhotonicsOptical MaterialsEngineeringDomain-inverted Linbo3	1991	73
Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors Jun Shibata, Ichiro Nakao, Yoichi Sasai, Applied Physics Letters Semiconductor TechnologyPhotonicsElectrical EngineeringEngineeringSemiconductor Lasers	1984	71
Deep Impurity Levels in InP LEC Crystals Yoshimitsu Yamazoe, Yoichi Sasai, Taneo Nishino, Japanese Journal of Applied Physics EngineeringLuminescence PropertyIi-vi SemiconductorOptical PropertiesDeep Impurity Levels	1981	64
Operation principle of the InGaAsP/InP laser transistor Yoshihiro Mori, Jun Shibata, Yoichi Sasai, Applied Physics Letters Optical PumpingPhotonicsLaser TechnologyEngineeringSemiconductor Lasers	1985	32
Electrically Pumped CdZnSe/ZnSe Blue-Green Vertical-Cavity Surface-Emitting Lasers Toshiya Yokogawa, Shigeo Yoshii, Ayumu Tsujimura, Japanese Journal of Applied Physics EngineeringLaser ScienceLaser PhysicsLaser ApplicationsLaser Material	1995	21
Fabrication and lasing characteristics of 1.3-μm InGaAsP multiquantum-well lasers Yoichi Sasai, Nobuyasu Hase, Mototsugu Ogura, Journal of Applied Physics Semiconductor TechnologyPhotonicsAdvanced Laser ProcessingEngineeringLaser Science	1986	17
Observation of Deep Impurity Levels in In<sub>0.85</sub>GA<sub>0.15</sub>As<sub>0.39</sub>P<sub>0.61</sub> Yoichi Sasai, Yoshimitsu Yamazoe, Masanoti Okuyama, Japanese Journal of Applied Physics EngineeringPhysicsDeep Impurity LevelsApplied PhysicsCondensed Matter Physics	1979	15
A 1.3 µm InGaAsP/InP Multiquantum Well Laser Grown by LPE Yoichi Sasai, Nobuyasu Hase, Takao Kajiwara Japanese Journal of Applied Physics EngineeringLaser ScienceLaser ApplicationsLaser MaterialSuper-intense Lasers	1985	13
LPE growth and characterization of InGaAsP/InP multiquantum well epitaxial layers Yoichi Sasai, Mototsugu Ogura, Takao Kajiwara Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringApplied PhysicsMolecular Beam Epitaxy	1986	12

Page 1