Publication | Closed Access
Optical Absorption due to Intrinsic Defects in CdS Single Crystals
22
Citations
24
References
1968
Year
Optical MaterialsEngineeringOptical AbsorptionAbsorption SpectroscopyChemistryOptical CharacterizationSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorElectronic DevicesOptical PropertiesMaterials SciencePhotonicsPhotoluminescenceCrystalline DefectsPhysicsOptoelectronic MaterialsIntrinsic ImpuritySemiconductor MaterialNatural SciencesSpectroscopyApplied PhysicsDouble DonorsLight AbsorptionActive DefectsOptoelectronicsIntrinsic DefectsSolar Cell Materials
Abstract Optical absorption spectra due to intrinsic defects in CdS were measured between 0.13 and 2.5 eV, at 80 °K. The results indicate that Cd interstitials (Cd i ) and Cd vacancies (Vcd) are the dominant electronically active defects, which act as double donors and double acceptors, respectively. A detailed discussion of the properties of the observed absorption bands, in particular their shape, polarization, and the effects of Cd and S heat treatment, leads to assignments to optical transitions at isolated Cd i and Vcd and at nearest‐neighbour donor‐acceptor associates between these intrinsic defects and impurity ions.
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