Applied Physics Letters · 1996 · 40 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor MaterialsCarrier TransportCharge Carrier TransportDevice CharacterizationDevice ModelingSemiconductor Device MaterialsSemiconductor PhysicsCarrier DiffusionCarrier LifetimeCarrier Lifetime MeasurementCarrier Transport In SemiconductorsNoncontact MeasurementNoncontact Measurement TechniquesSilicon WafersSurface Recombination
A theoretical model for the photothermal radiometric signal from semiconductors of finite thickness has been used to measure simultaneously the carrier diffusion coefficient, carrier lifetime, and surface recombination velocity of FZ Si wafers with very long bulk carrier lifetimes (industrial microelectronic grade). The results showed the importance of accounting for the finite thickness of the substrate in obtaining accurate measurements of these parameters using the entirely noncontacting radiometric approach.