Channeling in Iron and Lattice Location of Implanted Xenon

Abstract

We have studied heavy-ion ($^{4}\mathrm{He}$, $^{12}\mathrm{C}$, $^{14}\mathrm{N}$) channeling in carefully prepared iron single crystals. Angular distributions and critical angles in good agreement with the Lindhard theory were obtained. $^{131,132}\mathrm{Xe}$ was implanted into the iron crystal at 100 or 200 keV in a random direction at doses of (1-100) \ifmmode\times\else\texttimes\fi{} ${10}^{14}$ atoms/${\mathrm{cm}}^{2}$. In all cases, some radiation damage was evident from an increase in the minimum channeling yield. Typically (50 \ifmmode\pm\else\textpm\fi{} 10)% of implanted Xe was found to be at lattice sites at low doses, while most of the atoms were not substitutional at higher doses. Annealing at 450 \ifmmode^\circ\else\textdegree\fi{}C reduced the substitutional fraction; annealing at 300 \ifmmode^\circ\else\textdegree\fi{}C did not. These data are compared with M\"ossbauer-effect studies of hyperfine fields on Cs in iron.