Concepedia

Double quantum well resonant tunnel diodes

D. J. Day, Y.K. Chung, Chris Webb, J. N. Eckstein, J. M. Xu, M. Sweeny

Applied Physics Letters · 1990 · 36 citations · 8 references

Concepts

Categoryquantum ElectronicsRoom TemperatureDouble QuantumEngineeringPhysicsResonant Tunnel DiodesNanoelectronicsQuantum DeviceApplied PhysicsQuantum MaterialsOptoelectronics

Abstract

Double quantum well resonant tunnel diodes are demonstrated in InAlAs/InGaAs for the first time. Peak-to-valley ratios of greater than 70:1 at room temperature and 125:1 below 200 K are observed.

References

8

Tunneling in a finite superlattice

Raphael Tsu, L. Esaki · Applied Physics Letters · 1973 · 2.3K citations

Quantum Science, Superconducting Material, Engineering +15

Resonant tunneling in semiconductor double barriers

L. L. Chang, L. Esaki, Raphael Tsu · Applied Physics Letters · 1974 · 1.9K citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance device

Federico Capasso, R.A. Kiehl · Journal of Applied Physics · 1985 · 338 citations

Electrical Engineering, Engineering, Tunneling Microscopy +11

Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes

E. R. Brown, T. C. L. G. Sollner, C. D. Parker et al. · Applied Physics Letters · 1989 · 308 citations

Electrical Engineering, Engineering, Rf Semiconductor +11

Resonant interband tunnel diodes

M. Sweeny, Jingming Xu · Applied Physics Letters · 1989 · 148 citations

Electrical Engineering, Semiconductor Device, Engineering +10