Oxygen diffusion in thin films studied from isothermal electric resistivity measurements

Abstract

From isothermal four-point electric resistivity measurements we have determined the chemical diffusion coefficients for the in- and out-diffusion of oxygen in epitaxial c-axis oriented films of in the temperature range 500-650 K. At constant oxygen pressure we have observed the temporal changes in resistivity, following small steps upwards or downwards in temperature. At 600 K for the in- and out-diffusion of oxygen we found about the same diffusion coefficient . The temperature dependence of could be well fitted by an Arrhenius law, yielding the same activation energy eV for the in- and out-diffusion.