Ferrite-Partially-Filled on-Chip RF Inductor Fabricated Using Low-Temperature Nano-Powder-Mixed-Photoresist Filling Technique for Standard CMOS

Abstract

This paper reports new fully-CMOS-compatible on-chip RF inductors with Ni-Zn-Cu and Co <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Z-type ferrite-partially-filled structures fabricated using a novel low-temperature nano-powder- mixed-photoresist filling technique. Measured improvements are up to +35% in L and +250% in Q across multi-GHz with f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> to 11.4 GHz.