Physical review. B, Condensed matter · 1989 · 40 citations · 21 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsMaterials PhysicsAb Initio MethodsElectronic Band StructureOptical Properties Of SemiconductorsOptical Properties Of SolidsAb Initio CalculationsBand GapBand Gap EnergyBand Gap PredictionDirect Band GapOptical AbsorptionOptical Absorption SpectraPressure Dependence
The optical absorption of Ge near the direct band gap ${E}_{0}$ (${\ensuremath{\Gamma}}_{8v}^{+}$\ensuremath{\rightarrow}${\ensuremath{\Gamma}}_{7c}^{\mathrm{\ensuremath{-}}}$) has been investigated at pressures up to 9 GPa with use of thin samples of 3 and 11 \ensuremath{\mu}m thickness. We find a linear blue shift of the gap energy (${\mathrm{dE}}_{0}$/dP=0.121 eV/GPa) and an indication for a small increase of the corresponding spin-orbit splitting ${\ensuremath{\Delta}}_{0}$ by 2.4 meV/GPa. The pressure dependence of the band gap ${E}_{0}$ predicted by recent ab initio band-structure calculations is in good agreement with the present experimental results. The strength of the absorption at the direct edge is found to increase by a factor of 3 in the pressure range from 0 to 9 GPa.
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Intensity of Optical Absorption by Excitons
R. J. Elliott · Physical Review · 1957 · 2.1K citations
Piezo-Electroreflectance in Ge, GaAs, and Si
Fred H. Pollak, M. Cardona · Physical Review · 1968 · 852 citations
Natural Sciences, Materials Engineering, Materials Science +16