Exploitation of a Pulsed Laser to Explore Transient Effects on Semiconductor Devices

Abstract

This paper sets out to demonstrate the use of a pulsed semiconductor laser facility as a laboratory prompt gamma simulator, to complement existing radiation simulators. Comparability has been established between results obtained on the Laser Simulator and LINAC on a device technology family basis. The ease with which measurements at elevated temperatures and small area searches can be made are addressed and limitations to its use are noted.