Comparison of dopant incorporation into polycrystalline and monocrystalline silicon

Abstract

The capacitance-voltage (C-V) technique was used to compare the dopant distribution in polycrystalline silicon to that in monocrystalline silicon grown under the same conditions via chemical vapor deposition. Over a doping range extending from approximately 1015 to 1019 cm−3, the polycrystalline and monocrystalline material yielded identical results. These results, in conjunction with those of other investigations, indicate that the concentration and uniformity of dopant in both n- and p-type polycrystalline silicon match those in monocrystalline silicon.