Effects of the intermediate SiO2 layer on polarized output of a light-emitting diode with surface plasmon coupling

Abstract

The variation behaviors of the output intensity and polarization ratio of InGaN/GaN quantum well (QW) light-emitting diodes (LEDs) with surface plasmon (SP) coupling by inserting SiO2 intermediate layers between the p-GaN layers and surface Ag grating structures are demonstrated. The insertion of the SiO2 layer is expected to reduce the metal dissipation of SP energy and extend the near-field distribution range of the induced SP for generating more favored SP-QW coupling effects. The Ag grating period for optimizing SP-QW coupling is increased when a SiO2 layer is added to the device, which is consistent with the simulation results of the momentum matching of SP polariton and the resonance behavior of localized SP. The almost unpolarized outputs from other LED samples fabricated with an epitaxial structure of thicker p-GaN layer, which leads to weak SP-QW coupling, indicate that the observed polarization ratios are due to near-field SP-QW coupling, instead of far-field diffraction.