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Mechanical Properties and Oxidation Behavior of Ti-Si-N Films Prepared by Plasma-Assisted CVD
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1999
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Materials ScienceTi-si-n Films PreparedEngineeringMechanical PropertiesPlasma-assisted CvdOxidation ResistanceSurface ScienceApplied PhysicsTisin FilmsSemiconductor Device FabricationPure Tin FilmTisin FilmThin FilmsThin Film Process TechnologyPlasma ProcessingChemical Vapor DepositionThin Film Processing
Comparative studies of the mechanical and oxidation properties of TiN and TiSiN films were carried out in this work. The TiSiN films were deposited on high-speed steel and silicon wafer substrates by a plasma-assisted chemical vapor deposition (PACVD) technique using a gaseous mixture of TiCl4/SiCl4/N2/H2/Ar. The TiSi(∼7 at.-%)–N film showed an increased hardness value of ∼3400 HK (kg mm−2) in comparison with the undoped TiN film. The TiSi(∼7 at.-%)–N film also showed much improved anti-oxidation properties compared with the pure TiN film. The glass-like oxide layer on the surface of the TiSiN film was formed and retarded further oxidation of the nitride layer. These properties were also related to the microstructure of the TiSiN film, which was characterized by nanosized precipitates of silicon nitride phase in the TiN matrix and more randomly oriented grains.