Electronics Letters · 1986 · 32 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesOptoelectronic DevicesPhotodetectorsPhotonic Integrated CircuitsQuantum OptoelectronicsDetector Quantum EfficiencyDevice FabricationIndium Tin Oxide Thin FilmsInternal Quantum EfficiencyPhotodetector BandwidthPhotodiodesQuantum EfficiencyTin-doped Indium Oxide
In the letter we describe improved ITO/GaAs photodiodes for very high-speed applications. For the first time a GaAs device is reported which combines a millimetric wavelength response with a −3dB bandwidth of ≥ 50 GHz (10 ps FWHM), with a high quantum efficiency in excess of 30% at 820 nm.