Tabulation of the theoretical band-to-band luminescence spectra of heavily doped GaAs and application to experimental <i>n</i>-type GaAs spectra

Abstract

We have calculated the expressions for band-to-band luminescence given by Lasher and Stern for heavily doped GaAs. The resulting values in the case of no k selection rule are tabulated. A comparison between theory and experiment is made, which shows that good agreement can be obtained. From this comparison can be concluded that the band-to-band luminescence in heavily doped n-type GaAs is governed by transitions without k selection, whereas in moderately doped GaAs the transitions are without k selection at low temperatures but with k selection at room temperature.