Europhysics Letters (EPL) · 2000 · 98 citations · 25 references
Natural SciencesMaterials EngineeringMaterials ScienceElectromagnetismElectronic MaterialsMagnetic MaterialsFerromagnetic MaterialsFerromagnetismMagnetic AnisotropyMagnetic Properties Of SolidsMagnetism In SolidsSpintronicsAnisotropyCrystal AnisotropyCrystallographic AnisotropyMagnetic Tunnel JunctionsMagnetoresistanceSpin PolarizationTunnel JunctionsTunnel Magnetoresistance
A strong dependence of tunnel magnetoresistance (TMR) on the crystal orientation of ferromagnetic electrodes was confirmed experimentally. We studied the TMR of Fe/Al2O3/Fe50Co50 tunnel junctions with single-crystal Fe electrodes of different crystal orientations and found that the TMR ratio increased from 13% to 42% at 2K (8% to 26% at room temperature) when the crystal orientation was changed from (100) to (211). Such a TMR anisotropy could be explained in terms of the anisotropic spin polarization of Fe bulk and/or interface electronic states. The importance of the "momentum-filtering" effect of the tunnel barrier was also discussed.
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Tunneling between ferromagnetic films
M. Julliere · Physics Letters A · 1975 · 3.9K citations
G. A. Prinz · Science · 1998 · 3.6K citations