Journal of The Electrochemical Society · 1984 · 38 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsChalcogenide GlassesGlass MaterialsOxide SemiconductorsCompositional ReductionElectrical ResistivityElectrical Resistivity ReductionFluoride GlassesGlass CompositionGlass Composition DesignSemiconductor TechnologyViscosity
Low flow point, low polarization, and OH-free highly purified glasses have recently been needed for semiconductor device passivations. Additionally, high water durability, high electrical resistivity, and noncrystallizable glass properties are also indispensable to assure the reliability of the devices. Passivation glasses filled under several conditions described herein can be obtained from the compositional improvement of glasses. Glass compositions including fluoride containing ZnO-B/sub 2/O/sub 3/-PbO-SiO/sub 2/ systems have been formulated and investigated. It is generally known that the flow point or softening point of such glasses can be lowered by increasing B/sup 3 +/ and Pb/sup 2 +/ contents, and that the durability of glasses to water can be enhanced by raising Si/sup 4 +/ and Zn/sup 2 +/ contents. Also, the polarizability of the glasses can be reduced by increasing the B/sup 3 +/ content in glass compositions (5). Batch compositions were melted at 1350/sup 0/C for 3h in a Pt crucible using an electric furnace. After melting, molten glass was poured on a stainless steel plate and annealed. Glass was shaped into a 10 X 20 X 2 mm plate by grinding for infrared transmission measurement. Infrared absorption spectra were measured by the use of a Hitachi spectrophotometer.