Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 12 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesField-effect TransistorsIntegrated Circuit DesignIntegrated Circuit DevicesIntegrated Circuit FabricationMetal-oxide-semiconductor Field-effect TransistorsNanoelectronicsField Emission
We have succeeded in developing encapsulated silicon-vacuum field-emission transistors by using integrated circuit technology. This success will accelerate the development of integrated circuit of silicon-vacuum field-emission devices. Preliminary electrical characteristics of these encapsulated silicon-vacuum field-emission transistors show very similar characteristics to the gated field-emitter diode. However, the turn-on voltage and the transconductance are lower compared to the open gated field emitters.