Applied Physics Letters · 2001 · 50 citations · 17 references
Electrical EngineeringChemical EngineeringCarbon PatternsEngineeringNanotechnologyNanoelectronicsSurface ScienceApplied PhysicsSurface ElectrochemistryElectrochemical InterfaceSelective ElectrodepositionSemiconductor SurfacesNegative Patterning ProcessChemical DepositionElectrode Reaction MechanismElectrochemistry
Carbon patterns were deposited on Si(100) by electron beam-induced contamination decomposition. The feasibility of using such patterns as a mask for a subsequent electrochemical deposition of Au is studied. We demonstrate that under optimized electrochemical conditions electrodeposition of Au can be blocked selectively by single line carbon deposits in the order of only 1 nm thickness. The lateral resolution of this negative patterning process is in the sub 100 nm range. The principle opens perspectives for high definition patterning of semiconductor surfaces by selective electrodeposition.
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Electron-beam fabrication of 80-Å metal structures
A. N. Broers, W. W. Molzen, J. J. Cuomo et al. · Applied Physics Letters · 1976 · 305 citations
10-nm linewidth electron beam lithography on GaAs
H. G. Craighead, Richard Howard, L. D. Jackel et al. · Applied Physics Letters · 1983 · 138 citations