Influence of grain boundary recombination velocity and grain size on the minority carrier lifetime in polycrystalline semiconductors

Electrons and holes in semiconductors

M.D. Earle · Journal of the Franklin Institute · 1951 · 1.2K citations

Semiconductors, Semiconductor Devices, Semiconductor Technology +7

<i>Electrons and Holes in Semiconductors</i>

W. Shockley, E. M. Field · Physics Today · 1952 · 1K citations

Semiconductors, Semiconductor Devices, Engineering +7

Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination

H.C. Card, E.S. Yang · IEEE Transactions on Electron Devices · 1977 · 274 citations

Optical Materials, Engineering, Electronic Processes +19

Theory of the electrical and photovoltaic properties of polycrystalline silicon

Amal K. Ghosh, Charles Fishman, Tom Feng · Journal of Applied Physics · 1980 · 249 citations

Engineering, Organic Solar Cell, Semiconductor Materials +17

The determination of grain-boundary recombination rates by scanned spot excitation methods

C. H. Seager · Journal of Applied Physics · 1982 · 64 citations

Electrical Engineering, Semiconductor Device, Grain Boundaries +13