Small · 2008 · 146 citations · 27 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsNanotechnologySemiconductor MaterialsNanowiresQuantum ConfinementQuantum WellsSemiconductor HeterostructuresSemiconductor NanomaterialsSemiconductor PhysicsHeterostructuresMolecular Beam EpitaxyNanowire EpitaxyNanowire SynthesisPrismatic EffectQuantum Well GrowthQuantum Well Growth TechniquesSemiconductor Nanowires
GaAs nanowires are synthesized by molecular-beam epitaxy (MBE) without using gold as a nucleation seed. The synthesis can be tuned from 1D to 2D by changing the MBE growth conditions. This allows the deposition of quasi 1D quantum wells on the nanometer-wide facets of the nanowires, resulting in a prismatic geometry (see image).
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VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH
Ricarda Wagner, W. C. Ellis · Applied Physics Letters · 1964 · 6.7K citations
Epitaxial core–shell and core–multishell nanowire heterostructures
Lincoln J. Lauhon, Mark S. Gudiksen, Deli Wang et al. · Nature · 2002 · 2.1K citations
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Solid-phase diffusion mechanism for GaAs nanowire growth
Ann Persson, Magnus Larsson, Stig Stenström et al. · Nature Materials · 2004 · 661 citations
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